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(R)
SM15T6V8A/220A SM15T6V8CA/220CA
TRANSILTM
FEATURES PEAK PULSE POWER : 1500 W (10/1000s) BREAKDOWN VOLTAGE RANGE : From 6.8 V to 220 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantane ous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC's. ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol PPP P IFSM Parameter Peak pulse power dissipation (see note1) Power dissipation on infinite heatsink Non repetitive surge peak forward current for unidirectional types Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s. Tj initial = Tamb Tamb = 50C tp = 10ms Tj initial = Tamb Value 1500 6.5 200 Unit W W A C C C SMC
Tstg Tj TL
- 65 to + 175 150 260
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit on recommended pad layout Parameter Value 15 75 Unit C/W C/W
August 1999 Ed : 2A
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ELECTRICAL CHARACTERISTICS (Tamb = 25C)
Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Voltage temperature coefficient Forward Voltage drop IRM @ VRM Types
Uni directional SM15T6V8A SM15T7V5A SM15T10A SM15T12A SM15T15A SM15T18A SM15T22A SM15T24A SM15T27A SM15T30A SM15T33A SM15T36A SM15T39A SM15T68A SM15T100A SM15T150A SM15T200A SM15T220A Marking MDE MDG MDP MDT MDX MEE MEK MEM MEP MER MET MEV MEX MFP MFX MGK MGV MGX Bi directional SM15T6V8CA SM15T7V5CA SM15T10CA SM15T12CA SM15T15CA SM15T18CA SM15T22CA SM15T24CA SM15T27CA SM15T30CA SM15T33CA SM15T36CA SM15T39CA SM15T68CA SM15T100CA SM15T150CA SM15T200CA SM15T220CA Marking BDE BDG NDP BDT BDX BEE BEK BEM BEP BER BET BEV BEX BFP BFX BGK BGV
I IF
VCL
VBR VRM VF I RM V
T
VF
I PP
VBR min
@
IR
VCL @ IPP max 10/1000s
mA 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 V 10.5 11.3 14.5 16.7 21.2 25.2 30.6 33.2 37.5 41.5 45.7 49.9 53.9 92 137 207 274 A 143 132 103 90 71 59.5 49 45 40 36 33 30 28 16.3 11 7.2 5.5
VCL @ IPP max 8/20s
V 13.4 14.5 18.6 21.7 27.2 32.5 39.3 42.8 48.3 53.5 59.0 64.3 69.7 121 178 265 353 A 746 690 538 461 368 308 254 234 207 187 169 156 143 83 56 38 28
T
C
max
A
1000 500 V 5.8 6.4
nom max note2
V 6.8 7.5 10 12 15 18 22 24 27 30 33 36 39 68 100 150 200 V 7.14 7.88 10.5 12.6 15.8 18.9 23.1 25.2 28.4 31.5 34.7 37.8 41.0 71.4 105 158 210
max typ note3 note4
10-4/C 5.7 6.1 7.3 7.8 8.4 8.8 9.2 9.4 9.6 9.7 9.8 9.9 10.0 10.4 10.6 10.8 10.8 pF 9500 8500 7000 6000 5000 4300 3700 3500 3200 2900 2700 2500 2400 1550 1150 850 675
V 6.45 7.13 9.5 11.4 14.3 17.1 20.9 22.8 25.7 28.5 31.4 34.2 37.1 64.6 95.0 143 190
10 8.55 5 10.2 5 12.8 5 15.3 5 18.8 5 20.5 5 23.1 5 25.6 5 28.2 5 30.8 5 33.3 5 58.1 5 85.5 5 5 128 171
BGX
5 188
209
220
231
1
328
4.6
388
26
10.8
625
% I PP 10 0 10 s
Fig. 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board).
PULSE WAVEFORM 10/10 00 s
50
0 100 0 s
t
Note 2 : Note 3 : Note 4 :
Pulse test: tp < 50 ms. VBR = T * (Tamb - 25) * VBR(25C). VR = 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2.
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SM15Txx
Fig. 2 : Peak pulse power versus exponential pulse duration.
Fig. 3 :
Clamping voltage versus peak pulse current. Exponential waveform tp = 20 s tp = 1 ms ------------tp = 10 ms ...............
Note : The curves of the figure 3 are specified for a junction temperature of 25 C before surge. The given results may be extrapolatedfor other junction temperatures by using the following formula : VBR = T * [Tamb -25] * VBR(25C). For intermediate voltages, extrapolate the given results.
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SM15Txx
Fig. 4a : Capacitance versus reverse applied voltage for unidirectional types (typical values). Fig. 4b : Capacitance versus reverse applied voltage for bidirectional types (typical values).
Fig. 5 : Peak forward voltage drop versus peak forward current (typical values for unidirectional types).
Fig. 6 : Transient thermal impedance junctionambient versus pulse duration. Mounting on FR4 PC Board with recommended pad layout.
Fig. 7 : Relative variation of leakage current versus junction temperature.
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ORDER CODE
SM 15 T 100
SURFACE MOUNT 1500 WATT
CA
BIDIRECTIONAL
BREAKDOWN VOLTAGE MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only). PACKAGE MECHANICAL DATA SMC (Plastic) DIMENSIONS
E1
REF. A1 A2 b c E
A1
Millimeters Min. Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75
Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063
D
E
E1
C L A2
E2
b
E2
D L
Weight = 0.25 g. FOOTPRINT DIMENSIONS (Millimeters) SMC
3.3
Packaging : standard packaging is in tape and reel.
2.0
4.2
2.0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor forany infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5

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